2.0-22.0 ghz gaas mmic power amplifier page 1 of 9 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0014-bd september 2009 - rev 14-sep-09 ultra wide band power amplifier compact size/self bias architecture 11.0 db small signal gain +24.0 dbm p1db compression point +36.0 dbm third order intercept 100% visual inspection to mil-std-883 method 2010 features chip device layout absolute maximum ratings supply voltage (vd) supply current (id1) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) 1 +9.0 vdc 350 ma +20.0 dbm -65 to +165 oc -55 to +85 oc +175 oc (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) output power for 1db compression (p1db) output third order intermods (oip3) saturated output power (psat) drain bias voltage (vd) supply current (id) (vd=8.0v typical) units ghz db db db db db dbm dbm dbm vdc ma min. 2.0 9.0 5.0 9.0 - - +20.0 - - - - typ. - 15.0 10.0 11.0 +/-0.5 40.0 +24.0 +36.0 +25.0 +8.0 300 max. 22.0 - - - - - - - - +8.5 340 100% on-wafer dc testing and 100% rf wafer qualification. wafer qualification includes sample testing from each quadrant with an 80% pass rate required. mimix broadband?s distributed 2.0-22.0 ghz gaas mmic power amplifier has a small signal gain of 11.0 db with a +24.0 dbm p1db output compression point. this mmic uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for test instrumentation, military, space, microwave point-to-point radio, satcom and vsat applications. general description
2.0-22.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 page 2 of 9 cmm0014-bd power amplifier measurements (on wafer) cmm0014-bd, vd=8.0 v (96 devices, 12 wafers) 5 6 7 8 9 10 11 12 13 14 15 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 frequency (ghz) gain (db) max median mean -3sigma cmm0014-bd, vd=8.0 v (96 devices, 12 wafers) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 frequency (ghz) p1db (dbm) max median mean -3sigma cmm0014-bd, vd=8.0 v (96 devices, 12 wafers) -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 0.0 2.0 4.0 6.0 8.0 10.012.014.016.018.020.022.024.026.028.0 frequency (ghz) input return loss (db) max median mean -3sigma cmm0014-bd, vd=8.0 v (96 devices, 12 wafers) -30 -25 -20 -15 -10 -5 0 5 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 frequency (ghz) output return loss (db) max median mean -3sigma
page 3 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd power amplifier measurements (test fixture) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 cmm0014-bd vd=8.0 v, id=314 ma 7 8 9 10 11 12 13 14 15 16 17 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 frequency (ghz) gain (db) +85 deg c -40 deg c +25 deg c cmm0014-bd vd=8.0 v, id=314 ma -70 -60 -50 -40 -30 -20 -10 0 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 frequency (ghz) reverse isolation (db) +85 deg c -40 deg c +25 deg c cmm0014-bd vd=8.0 v, id=314 ma -35 -30 -25 -20 -15 -10 -5 0 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 frequency (ghz) input return loss (db) +85 deg c -40 deg c +25 deg c cmm0014-bd vd=8.0 v, id=314 ma -25 -20 -15 -10 -5 0 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 frequency (ghz) output return loss (db) +85 deg c -40 deg c +25 deg c cmm0014-bd vd=8.0 v, id=314 ma 20 21 22 23 24 25 26 27 28 29 30 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 frequency (ghz) output power p1db (dbm) +85 deg c -40 deg c +25 deg c cmm0014-bd vd=8.0 v, id=314 ma 30 32 34 36 38 40 42 44 46 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 frequency (ghz) output third order intercept (dbm) +85 deg c -40 deg c +25 deg c
2.0-22.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 page 4 of 9 cmm0014-bd power amplifier measurements (test fixture) (cont.) cmm0014-bd vd=8.0v, id=300 ma 0 1 2 3 4 5 6 7 8 9 10 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 frequency (ghz) noise figure (db) cmm0014-bd vd=8.0 v, id=314 ma 35 40 45 50 55 60 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 frequency (ghz) output second order intercept (dbm) +25 deg c
page 5 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd s-parameters mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 typical s-parameter data for cmm0014 vd=8.0 v id=286 ma frequency s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1.0 0.266 -78.75 3.573 -160.68 0.0019 -1.37 0.209 -153.57 2.0 0.169 -98.98 3.585 145.05 0.0030 162.32 0.144 -167.67 3.0 0.201 -111.56 3.718 109.46 0.0008 -24.48 0.129 -161.85 4.0 0.199 -135.87 3.629 78.61 0.0004 -6.73 0.131 -145.13 5.0 0.188 -157.19 3.563 49.5 4 0.0009 11.52 0.165 -135.21 6.0 0.139 -175.43 3.500 21.90 0 .0013 -25.55 0.209 -135.22 7.0 0.093 170.91 3.473 -5.72 0.0015 -26.70 0.246 -139.55 8.0 0.035 172.50 3.463 -33.01 0.0017 -44.19 0.268 -144.78 9.0 0.044 -85.43 3.475 -60.36 0.0015 -47.30 0.276 -148.95 10.0 0.108 -89.70 3.510 -88.03 0.0020 -67.93 0.274 -150.84 11.0 0.162 -105.93 3.536 -116.36 0.0029 -78.82 0.278 -149.96 12.0 0.194 -124.70 3.552 -145.08 0.0033 -95.57 0.296 -148.23 13.0 0.198 -144.76 3.552 -173.93 0.0047 -121.22 0.329 -148.74 14.0 0.170 -165.58 3.545 157.00 0.0050 -136.13 0.363 -152.56 15.0 0.108 174.33 3.535 127.75 0.0065 -158.63 0.388 -158.55 16.0 0.018 160.70 3.525 98.36 0.0069 172.66 0.392 -165.81 17.0 0.086 -58.66 3.521 68.77 0.0093 148.83 0.370 -171.76 18.0 0.179 -83.29 3.544 38.38 0.0110 124.03 0.336 -174.64 19.0 0.236 -107.31 3.587 7.29 0.0116 103.37 0.308 -170.51 20.0 0.249 -131.13 3.612 -25.39 0.0135 77.99 0.328 -164.59 21.0 0.206 -154.08 3.578 -59.04 0.0151 50.60 0.384 -165.13 22.0 0.108 -164.25 3.510 -93.16 0.0163 21.42 0.435 -173.12 23.0 0.097 -100.05 3.365 -126.99 0.0177 -13.67 0.440 175.72 24.0 0.226 -106.64 3.320 -161.12 0.0178 -41.16 0.409 165.88 25.0 0.299 -134.96 3.371 162.28 0.0204 -77.94 0.336 160.81 26.0 0.272 -160.21 3.337 120.42 0.0228 -112.45 0.285 170.62 27.0 0.226 -164.37 2.977 76.20 0.0227 -154.71 0.359 178.17 28.0 0.307 -170.46 2.435 36.00 0.0227 166.77 0.457 168.76 29.0 0.375 161.14 2.112 -0.03 0.0224 135.77 0.513 150.69 30.0 0.394 132.18 2.019 -38.65 0.0242 91.65 0.484 130.64 31.0 0.376 103.70 2.035 -92.25 0.0274 58.69 0.345 118.95 32.0 0.393 87.96 1.128 -161.68 0.0191 7.13 0.490 118.19 33.0 0.477 64.62 0.835 -155.68 0.0197 6.95 0.349 65.29 34.0 0.519 43.16 0.884 116.87 0.0130 -62.29 0.519 93.44 35.0 0.558 23.55 0.384 56.63 0.0042 -115.69 0.626 40.51 36.0 0.558 7.50 0.162 15.29 0.0029 -69.54 0.585 -0.43 37.0 0.562 -4.57 0.080 -9.88 0.0051 -15.51 0.574 -33.04 38.0 0.585 -13.15 0.041 -38.28 0.0074 -96.72 0.587 -61.68 39.0 0.605 -20.69 0.022 -57.51 0.0059 -91.80 0.627 -87.14 40.0 0.624 -28.09 0.013 -93.55 0.0047 -176.47 0.697 -114.06
page 6 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is m380) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 1.65 mg. bond pad #1 (rf in) bond pad #2 (vd) bond pad #3 (rf out) bond pad #4 (rs-1.2 ) bond pad #5 (rs-2.1 ) bond pad #6 (rs-3.3 ) 1.140 (0.045) 2 3 4 0.352 (0.014) 2.234 (0.088) 2.340 (0.092) 0.0 0.0 1.614 (0.024) 1.034 (0.041) 2.149 (0.085) 2.249 (0.089) 2.045 (0.081) 5 6 1 2 3 4 5 6 1 rf in rf out vd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09
page 7 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. bias is nominally vd=8v, id=300 ma. for additional assistance in setting current via source resistor, see source resistance table below. app note [2] bias arrangement - each dc pad (vd) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. additionally, to achieve the required broadband decoupling network a high-q drain bias inductor with high-q bypass capacitor is needed. the proper network is necessary in order to bring drain bias into the device with minimal impact on rf performance. the high-q inductor is typically an air coil that can be purchased from an air coil manufacturer (microwave components or piconics for example). the air coil needs to have minimum current handling capability, thus planned operating current needs to be defined and consider ed before defining actual air coil to be used. mimix recommends 1.4 mil diameter gold wire and 4 turns as a starting point and may need t o be optimized based on the actual application. self-resonance of the bias inductor causes degradation in performance at both the lo w and high ends of the band. the self resonance is sensitive to spacing between turns and number of turns used. for example, the more turn s in the drain bias inductor the lower the self-resonant frequency of the inductor creating high end rf performance degradation. the opp osite is true for a smaller number of turns. in terms of coil attachment to mmic device (wedge bond tool method), cut coil leads to desi red length, use tweezers or wedge bond tip (press on wire to pick up) to place coil for bonding. make first bond on mmic die bond pad using wedge bonder tool. move coil lead as necessary and make second and final bond to bypass capacitor with wedge bond tool using same met hod as first bond. current select - at times the need to balance performance against system power budgets forces a trade off between bias current, gain, p1db, or other parameters. this note includes information on how to use the built-in binary bias ladder to adjust the currents enabling this trade off. the bias is controlled by the self bias resistor network in the bottom right corner of the die. these resistors have binary relative values so that you can step the current from a minimum to a maximum with multiple different bias options available along the way. the infinity option is not useful as there is no current flow with all resistors open. using the information from the current select table shown here allows the user to set the resistors adjusting the current up or down from a nominal value. in addition, the table can be used to estimate how to make a change with minimum trial and error. the net result is that the current can be adjusted over a wide range with incremental control. bonding substrate - if you are concerned about dialing in the exact current or making fine adjustments to the bias point it is recommended that a bonding substrate, like the one shown here, be used. the purpose is to allow the chip to substrate wire bonds to be left intact and not to be used for adjustments. the bond wires that go from the substrate to ground are then added or subtracted to tune the bias as necessary. app note [3] material stack-up ? in addition to the practical aspects of bias and bias arrangement, device base material stack-up also must be considered for best thermal performance. a well thought out thermal path solution will improve overall device reliability, rf performance and power added efficiency. the photo shows a typical high power amplifier carrier assembly. the material stack-up for this carrier is shown below. this stack-up is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal properties, material availability and end application performance requirements. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 left center corner delta current 3.3 2.1 1.2 ma 0 0 0 infinity na 1 0 0 3.30 -200 0 1 0 2.10 -175 1 1 0 1.28 -150 0 0 1 1.20 -75 1 0 1 0.88 -50 0 1 1 0.76 -25 1110.62max cmm0014 - source resistance table net r copper block ausn eutectic solder alumina substrate diemat dm6030hk epoxy, ~1mil moly carrier, 25mil au plated moly rib, 5mil, au plated mmic, 3mil
cmm0014-bd vd=8.0 v, id=280 ma 1.0e+05 1.0e+06 1.0e+07 1.0e+08 1.0e+09 55 65 75 85 95 105 115 125 backplate temperature (deg c) mttf (hours) cmm0014-bd vd=8.0 v, id=280 ma 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 55 65 75 85 95 105 115 125 baseplate temperature (deg c) fits cmm0014-bd vd=8.0 v, id=280 ma 90 100 110 120 130 140 150 160 170 55 65 75 85 95 105 115 125 backplate temperature (deg c) tch (deg c) page 8 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd mttf graphs these numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at mimix broadband. the values shown here are only to be used as a guideline against the end appli cation requirements and only represent reliability information under one bias condition. ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reli ability for a specific application, see previous pages. if the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09
page 9 of 9 2.0-22.0 ghz gaas mmic power amplifier cmm0014-bd handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any compone nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.075 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxy is die mat dm6030hk or an epoxy with >52 w/m ok thermal conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description cmm0014-bd-000v rohs compliant die packed in vacuum release gel packs pb-cmm0014-bd-0000 cmm0014-bd evaluation module mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. september 2009 - rev 14-sep-09 caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device.
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